Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces
نویسندگان
چکیده
Pouya Moetakef, Tyler A. Cain, Daniel G. Ouellette, Jack Y. Zhang, Dmitri O. Klenov, Anderson Janotti, Chris G. Van de Walle, Siddharth Rajan, S. James Allen, and Susanne Stemmer Materials Department, University of California, Santa Barbara, California, 93106-5050, USA Department of Physics, University of California, Santa Barbara, California, 93106-9530, USA FEI, Achtseweg Noord 5, 5651 GG Eindhoven, The Netherlands Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
منابع مشابه
Electronic Structure of Oxide Interfaces: A Comparative Analysis of GdTiO3/SrTiO3 and LaAlO3/SrTiO3 Interfaces
Emergent phases in the two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides have attracted great attention in the past decade. We present ab-initio electronic structure calculations for the interface between a Mott insulator GdTiO3 (GTO) and a band insulator SrTiO3 (STO) and compare our results with those for the widely studied LaAlO3/SrTiO3 (LAO/STO) interf...
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We report on structural distortions in extreme-electron density (∼6×10(14) cm(-2)) confined quantum wells of SrTiO3 embedded in GdTiO3. Sr-column displacements are measured using high-angle annular dark-field imaging in scanning transmission electron microscopy. Using thick SrTiO3 layers as a reference, orthorhombic-like Sr-site displacements are observed when SrTiO3 quantum wells are thinner ...
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